The letter n following the first number indicates a semiconductor. Bc557, 557b general purpose transistor page 3 310505 v1. Drain d, through which the carriers leave the channel. Emitter saturation voltage vbesat ic 150ma, ib 15ma 0. Absolute maximum ratings ta25c unless otherwise noted.
A wide variety of 01 transistor options are available to you, there are 358 suppliers who sells 01 transistor on, mainly located in. Getting children in and out requires less effort, and tight spaces and concrete pillars in car parks are much less of a problem. Irfr1n60a, irfu1n60a, sihfr1n60a, sihfu1n60a vishay siliconix power mosfet features product summary halogenfree according to iec 61249221 vds v 600 definition rdson max. Conventionally, current entering the channel at s is designated by i s. Elektronische bauelemente npn plastic encapsulated. It is particularly suited for 115 and 220 v switch. High voltage fastswitching npn power transistor description the utc mje02 designed for use in highvolatge, high speed,power switching in inductive circuit, it is particularly suited for 115 and 220v switchmode applications such as switching regulators,inverters, dc. But the problem is these two transistors are not identical in their label.
Emitter saturation voltage vcesat ic 150ma, ib 15ma. Mje07d mje07 switchmode npn bipolar power transistor for switching power supply applications the mje07 is designed for high. Mje05d mje05g switchmode series npn silicon power transistors these devices are designed for high. Posted on november 7, 2016 november 8, 2016 by diode.
Toshiba transistor silicon pnp epitaxial type pct process 2sa10 color tv verttical deflection output applications power switching applications high voltage. Triple diffused silicon npn transistor designed for low frequency power amplifier maximum ratings characteristic symbol value unit collector base voltage vcbo 100 v collector emitter voltage vceo 80 v emitter base voltage vebo 5 v collector current dc ic 4 a collector current. Sp01 high voltage fastswitching npn power transistor components datasheet pdf data. The nte331 npn and nte332 pnp are silicon epitaxialbase complementary power transistors in a to220 plastic package intended for use in power linear and switching applications. Collector output capacitance 0 20 406080 100 0 2 4 6 8 10 12 14 16 18 20 ib 120ua ib 80ua ib 60ua ib 40ua ib 100ua ib 20ua i c ma. Bipolar transistorextra high voltage seriesshenzhen sanpu semiconductor co.
I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. Mje01 datasheet, mje01 pdf, mje01 data sheet, mje01 manual, mje01 pdf, mje01, datenblatt, electronics mje01, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. Bipolar transistorextra high voltage seriesshenzhen sanpu. The 2 or 3digit number following the letter n is a serialized identification number. Source s, through which the carriers enter the channel. Mcc micro commercial components tm omponents 20736 marilla street chatsworth. Gate g, the terminal that modulates the channel conductivity. Parameter symbol ztx602 ztx603 unit collectorbase voltage vcbo 80 100 v collectoremitter voltage vceo 60 80 v emitterbase voltage vebo 10 v peak pulse current icm 4a continuous. Absolute maximum ratings symbol parameter value unit vces collectoremitter voltage vbe 0 700 v vceo collectoremitter voltage ib 0 400 v vebo emitterbase voltage ic 0, ib 0. They are particularly suited for 115 and 220 v switchmode applications such as switching regulators, inverters, motor controls. The only thing mje 01 and buz 11a has common are three legs.
Dgnjdz power switching applications,alldatasheet, datasheet, datasheet search site for electronic. Silicon npn power transistor silicon npn, high power transistors in a plastic envelope, primarily for use in highspeed power switching circuits. Product specification shenzhen remote host or network may be down. March 94 features 80 volt vceo 1 amp continuous current gain of 2k at ic1 amp ptot 1 watt absolute maximum ratings.
Electrical ratings st03, st03k 210 docid533 rev 5 1 electrical ratings table 2. Nanjing international group co nanjing international g. Baseemitter saturation voltage collectoremitter saturation voltage figure 4. Electronic manufacturer, part no, datasheet, electronics description. Sunroc alja0 transistor pnp to92 features high dc current gain and excellent hfe linearity 1. Nte123ap silicon npn transistor audio amplifier, switch. Chip was 10 as described previously quantitative pcr was performed for each sample as described below and experiments were repeated 3 times. Conventionally, current entering the channel at d is designated by i d. Equivalent transistor mje01 datasheetparts requests. Sps 01 datasheet, cross reference, circuit and application notes in pdf format. Mje01a1 silicon npn transistor in a to92 plastic package. So is it safe to assume that its also npn transistor. Toshiba transistor silicon pnp epitaxial type pct process.